Current-Induced Restructuring and Chemical Modification of N-Doped Multi-walled Carbon Nanotubes
Current-Induced Restructuring and Chemical Modification of N-Doped Multi-walled Carbon Nanotubes
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N掺杂多壁碳纳米管的电流诱导重构和化学改性
DOI：
10.1002/adfm.201101036
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发表时间：
2011
影响因子：
19
通讯作者：
Aslam Z
中科院分区：
文献类型：
--
作者：
Aslam Z
多壁碳纳米管（MWCNTs）由于其固有的电学特性，长期以来一直被期望在日益小型化的电子工业中作为电子元件的候选材料。可以通过引入N、B和p等掺杂剂来操纵和控制这些性质。虽然已经观察到MWCNTs中一些电流诱导的结构变化，但目前还没有系统的研究来探索内部结构变化与掺杂MWCNTs电子行为在电流密度方面的相关性。本文采用原位透射电子显微镜(TEM) /扫描隧道显微镜（TEM/STM）对单个N掺杂MWNCT （N - MWCNTs）进行了原位透射电子显微镜（TEM）研究。首次观察到N - MWCNTs不仅发生电流诱导的结构转变；即，从典型的N - MWCNTs的竹状结构到堆叠的锥形结构，但最重要的是，完全去除掺杂剂会导致电子行为的显著变化。这对掺杂碳纳米管作为电子元件的使用具有重要意义，特别是在合成受控掺杂浓度的碳纳米管方面正在做出巨大努力。
Multi‐walled carbon nanotubes (MWCNTs) have long been anticipated as candidates for electrical components in an increasingly miniaturized electronics industry due to their inherent electrical properties. It is possible to manipulate and control these properties by introducing dopants such as N, B, and P. Although some current‐induced structural changes in MWCNTs have been observed, no systematic study has been carried out to explore the correlation of changes in the internal structure with the electronic behavior of doped‐MWCNTs in terms of the current densities present. In situ transmission electron microscopy (TEM) investigations are presented here of individual, N‐doped MWNCT (N‐MWCNTs) using the in situ TEM/scanning tunneling microscopy (TEM/STM) Nanofactory© holder. It is observed for the first time that N‐MWCNTs not only undergo current‐induced structural transformation; i.e., from the typical bamboo structure of N‐MWCNTs to the stacked cones, but also—and most importantly—the complete removal of the dopant causes a significant change in the electronic behavior. This has serious implications for the use of doped CNTs as electronic components, especially since tremendous efforts are being made to synthesize CNTs with controlled dopant concentrations.