Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes
Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes
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DOI：
10.1088/1742-6596/924/1/012008
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发表时间：
2017-11
期刊：
影响因子：
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通讯作者：
T. Nagase;S. Abe;Takashi Kobayashi;Y. Kimura;Azusa Hamaguchi;Y. Ikeda;H. Naito
中科院分区：
文献类型：
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作者：
T. Nagase;S. Abe;Takashi Kobayashi;Y. Kimura;Azusa Hamaguchi;Y. Ikeda;H. Naito
以二萘并[2，3-B：2 '，3'-f]噻吩并[3，2-B]噻吩（DNTT）为前体，制备了底栅有机场效应晶体管（OFFET），并采用五氟苯乙炔（PFBT）对底栅源漏电极进行了化学修饰。使用CYTOP外涂层制备DNTT膜允许底栅/底接触DNTT FET的溶液处理，在PFBT处理的Au电极和DNTT分子之间具有良好的电接触。使用CYTOP外涂层处理的DNTT FET表现出高达0.37 cm 2 V−1 s−1的场效应迁移率。沟道长度为5 μm的溶液处理DNTT FET的最大迁移率高达0.29 cm 2 V−1 s−1。
Bottom-gate organic field-effect transistors (OFETs) based on a soluble precursor of dinaphtho[2,3-b:2’,3’-f]thieno[3,2-b]thiophene (DNTT) with bottom-contact source-drain electrodes chemically modified with pentafluorobenzenethiol (PFBT) have been fabricated. The preparation of DNTT films using CYTOP overcoat layers allows the solution processing of bottom-gate/bottom-contact DNTT FETs with good electrical contacts between the PFBT-treated Au electrodes and the DNTT molecules. The DNTT FETs processed using CYTOP overcoat layers exhibit the field-effect mobilities of up to 0.37 cm2 V−1 s−1. High maximum mobility of 0.29 cm2 V−1 s−1 has been achieved in solution-processed DNTT FETs with channel length of 5 μm.