Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons
Identification of vacancy-oxygen complexes in oxygen-implanted silicon probed with slow positrons
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DOI：
10.1063/1.1652241
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发表时间：
2004-03
影响因子：
3.2
通讯作者：
M. Fujinami;T. Miyagoe;T. Sawada;R. Suzuki;T. Ohdaira;T. Akahane
中科院分区：
文献类型：
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作者：
M. Fujinami;T. Miyagoe;T. Sawada;R. Suzuki;T. Ohdaira;T. Akahane
利用可变能量正电子湮没谱中的符合多普勒展宽（CDB）和寿命测量，研究了低剂量（2×1015/cm ~ 2）和高剂量（1.7×1018/cm ~ 2）注氧硅中的缺陷及其退火行为。在低剂量样品中，在整个注入区域中诱导双空位。在空位-氧共存区域（300-500 nm深度）中，通过将退火温度升高到600 °C，形成具有一个空位的空位-氧络合物，并且同时开始发生氧的迁移。在富空位区（-200 nm深度），主要在600 °C以下观察到简单空位团簇向V4的演化。从CDB和寿命测量，已经证明，在800 °C下退火后，在整个注入区域形成了xCoOy复合物，并且它们包含四个空位和高的y与x的比率。另一方面，在550 °C下的高剂量注入产生了具有高分子量的NiOy复合物。
Defects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron annihilation spectroscopy. In the low-dose sample, divacancies are induced throughout the entire implantation region. In the vacancy-oxygen coexisting region (300–500 nm depths), by raising the annealing temperature to 600 °C, vacancy–oxygen VxOy complexes with one vacant site are formed and, simultaneously, the migration of oxygen begins to takes place. In the vacancy-rich region (−200 nm depths), the evolution of simple vacancy clusters to V4 is mainly observed below 600 °C. From CDB and lifetime measurements, it has been proven that after annealing at 800 °C, the VxOy complexes are formed throughout the implanted region and they contain four vacant sites and a high ratio of y to x. On the other hand, high-dose implantation at 550 °C produces the VxOy complexes w...