Sharp ballistic p-n junction at room temperature using Zn metal doping of graphene
Sharp ballistic p-n junction at room temperature using Zn metal doping of graphene
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DOI：
10.1088/2053-1583/acd795
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发表时间：
2023-07-01
期刊：
影响因子：
5.5
通讯作者：
Russo，Saverio
中科院分区：
文献类型：
--
作者：
Leontis，Ioannis;Prando，Gabriela Augusta;Russo，Saverio
弹道石墨烯p-n结(GPNJ)特别适合于开发光学电路的电子对应物，因为高透明度使其界面上的载波调制比扩散结更好。在这里，我们展示了一种低成本和可扩展的基于物理吸附锌原子沉积的弹道平面GPNJ的制备方法。通过对石英透明衬底的空间分辨拉曼光谱的详细研究，可以准确地映射跨越石墨烯/锌界面和金属层下面的电荷掺杂和应变。同时，不同沟道长度的晶体管结构的电学测量，即转移长度的电学测量，以及它们的模拟，揭示了电荷传输到室温的弹道性质。
Ballistic graphene p–n junctions (GPNJs) are uniquely suited to develop electrical counterparts of optical circuits as the large transparency enables a better carrier modulation in their interfaces than the diffusive junctions. Here we demonstrate a low-cost and scalable method for the fabrication of ballistic planar GPNJs based on the deposition of physisorbed Zn adatoms. A detailed study of spatially resolved Raman spectroscopy through a quartz transparent substrate enables the accurate mapping of the charge doping and strain across the graphene/Zn interface and underneath the metal layer. At the same time, the electrical measurements of transistor structures with varying channel length, ie transfer length electrical measurements, and their modeling reveal the ballistic nature of the charge transport up to room temperature.