Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures
Electron-beam-induced damage in amorphous SiO2 and the direct fabrication of silicon nanostructures
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DOI：
10.1080/01418619808241915
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发表时间：
1998-08-01
期刊：
影响因子：
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通讯作者：
Humphreys, CJ
中科院分区：
文献类型：
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作者：
Chen, GS;Boothroyd, CB;Humphreys, CJ
本文研究了自支撑非晶SiO_2（a-SiO_2）薄膜在100 keV电子束高剂量区（10（7）-10（9）Cm（-2））辐照下的行为。电子能量损失和能量色散X-射线测量表明，氧优先损失的损伤过程中留下的辐照的a-SiO2氧缺乏。结果进行了讨论，在以前报道的模型，这表明，从a-SiO2的质量损失是由于高能量溅射，表面解吸和体积解离机制的组合。在注入约3 × 10（9）Cm（-2）电子后，氧可以从15 nm厚的a-SiO2层中完全去除。在发现这种效应的基础上，我们开发了一种直接从a-SiO2制备硅纳米结构的可控方法。特别是，如果用纳米级的高强度电子束照射a-SiO2，则会形成硅柱，其直径可以小至2纳米。如果光束沿直线移动，则会形成一个薄的硅板。这些硅纳米结构在100 keV电子的10（9）Cm（-2）剂量后在电子辐照下直接形成，并且不需要抗蚀剂或化学显影。
We have investigated the behaviour of self-supporting amorphous SiO2 (a-SiO2) thin films under 100 keV electron-beam irradiation in a high-dose regime (10(7)-10(9) C m(-2)). Electron-energy-loss and energy-dispersive X-ray measurements show that oxygen is preferentially lost during the damage process which leaves the irradiated a-SiO2 oxygen deficient. The results are discussed in terms of previously reported models, which suggest that the mass loss from a-SiO2 is attributed to a combination of high-energy sputtering, surface desorption and volume-dissociated mechanisms. The oxygen can be totally removed from a-SiO2 layer 15 nm thick after a dosage of approximately 3 x 10(9) C m(-2) electrons. On the basis of the discovery of this effect we develop a controlled way of making nanostructures of silicon directly from a-SiO2. In particular, if a-SiO2 is irradiated with a highly intense electron beam of nanometre scale, then a column of silicon is formed, which can be as small as 2 nm in diameter. If the beam is moved in a straight line, then a thin plate of silicon is formed. These silicon nanostructures are formed directly under electron irradiation after a dose of 10(9) C m(-2) of 100 keV electrons and no resists or chemical development are required.