High-pressure, high-temperature synthesis of SiC–diamond nanocrystalline ceramics
High-pressure, high-temperature synthesis of SiC–diamond nanocrystalline ceramics
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DOI：
10.1063/1.1288602
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发表时间：
2000-08
影响因子：
4
通讯作者：
E. Ekimov;A. Gavriliuk;B. Palosz;S. Gierlotka;P. Dłużewski;E. Tatianin;Yu. A. Kluev;A. M. Naletov;A. Presz
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文献类型：
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作者：
E. Ekimov;A. Gavriliuk;B. Palosz;S. Gierlotka;P. Dłużewski;E. Tatianin;Yu. A. Kluev;A. M. Naletov;A. Presz
在高压（77 kbar）和高温（1400-2000 °C）条件下，通过液态Si渗透到纳米金刚石体中，合成了致密且完全纳米晶的金刚石-SiC陶瓷。基于X射线衍射和透射电子显微镜观察，提出了一种合成材料的模型，其中单个多晶金刚石颗粒通过SiC-金刚石纳米层结合。纳米层提供了一个非常高的硬度，整个试样高达51 GPa。在该系统中检测到自停止硅渗透现象。这一现象可以解释为由于在孔内形成SiC而导致熔融Si和金刚石纳米粉末之间的边界附近的孔闭合。
Dense and entirely nanocrystalline diamond–SiC ceramics were synthesized by the infiltration of liquid Si into the nanodiamond body under high-pressure (77 kbar) and high-temperature (1400–2000 °C) conditions. Based on x-ray diffraction and transmission electron microscopy observations, a model of as-synthesized material is proposed, where individual polycrystalline diamond particles are bonded via SiC–diamond nanolayers. The nanolayers provide a very high hardness of the entire specimen up to 51 GPa. The phenomenon of self-stop Si infiltration was detected in this system. This phenomenon can be explained by the closure of pores near the boundary between molten Si and diamond nanopowder due to the formation of SiC inside the pores.