Quantum Hall effect in polar oxide heterostructures
Quantum Hall effect in polar oxide heterostructures
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DOI：
10.1126/science.1137430
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发表时间：
2007-03-09
期刊：
影响因子：
56.9
通讯作者：
Kawasaki, M.
中科院分区：
文献类型：
--
作者：
Tsukazaki, A.;Ohtomo, A.;Kawasaki, M.
在激光分子束外延生长的极性ZnO/MgxZn1-xO异质结中，观察到了高迁移率二维电子气中的Shubnikov-de Haas振荡和量子霍尔效应。通过调节势垒中的镁含量和生长极性，电子密度可以控制在0.7×10(12)~3.7×10(12)/平方厘米的范围内。根据振荡幅度与温度的关系，得到二维电子的有效质量为自由电子质量的0.32+/-0.03倍。氧化物异质结构中量子霍尔效应的演示展示了将量子霍尔物理与复杂异质结构中金属氧化物的多功能相结合的可能性。
We observed Shubnikov-de Haas oscillation and the quantum Hall effect in a high-mobility two-dimensional electron gas in polar ZnO/MgxZn1-xO heterostructures grown by laser molecular beam epitaxy. The electron density could be controlled in a range of 0.7 x 10(12) to 3.7 x 10(12) per square centimeter by tuning the magnesium content in the barriers and the growth polarity. From the temperature dependence of the oscillation amplitude, the effective mass of the two-dimensional electrons was derived as 0.32 +/- 0.03 times the free electron mass. Demonstration of the quantum Hall effect in an oxide heterostructure presents the possibility of combining quantum Hall physics with the versatile functionality of metal oxides in complex heterostructures.