High‐Mobility N‐Type Organic Field‐Effect Transistors of Rylene Compounds Fabricated by a Trace‐Spin‐Coating Technique
High‐Mobility N‐Type Organic Field‐Effect Transistors of Rylene Compounds Fabricated by a Trace‐Spin‐Coating Technique
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DOI：
10.1002/aelm.201500430
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发表时间：
2016-05
影响因子：
6.2
通讯作者：
Guangyao Zhao;Pengcheng Gu;Huanli Dong;Wei Jiang;Zhaohui Wang;Wenping Hu
中科院分区：
文献类型：
--
作者：
Guangyao Zhao;Pengcheng Gu;Huanli Dong;Wei Jiang;Zhaohui Wang;Wenping Hu
中国科学院有机固体化学研究所北京分子科学国家实验室重点实验室北京100190；中国电子邮件：dhl522@icCas.ac.cn；wangzhao辉@icCas.ac.cn；赵国章，中国科学院研究生院光学材料与光子器件教研室，北京100049，北京师范大学化学工程系光学材料与光子器件北京100037，中国教授，天津大学化学学院分子光电科学系重点实验室，天津大学化学科学与工程协同创新中心(天津)300072，中国
G. Zhao, P. Gu, Prof. H. Dong, Prof. W. Jiang, Prof. Z. Wang, Prof. W. Hu Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 , P. R. China E-mail: dhl522@iccas.ac.cn; wangzhaohui@iccas.ac.cn; huwp@iccas.ac.cn; G. Zhao Graduate University of Chinese Academy of Sciences Beijing 100049 , P. R. China P. Gu, Prof. H. Dong Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing 100037 , China Prof. W. Hu Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of Chemistry School of Science Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin 300072 , China