Enhanced perpendicular coercivity of ultrathin perpendicularly
Enhanced perpendicular coercivity of ultrathin perpendicularly
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超薄垂直增强垂直矫顽力
DOI：
10.1016/j.jsamd.2016.03.001
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Hiroyuki Awano
中科院分区：
文献类型：
--
作者：
Do Bang;Hiroyuki Awano
研究了在硅衬底上生长的垂直磁化TbFeCo薄膜中附加薄Pt底层对薄膜磁性能的影响。我们已经证明，薄的Pt底层的存在下，可以提高厚度下降到1 nm的TbFeCo薄膜的垂直磁化率，同时保持其低的饱和磁化强度。这可能是由于Pt和Co轨道的杂化导致Co/Pt和/或CoFe/Pt的强界面垂直各向异性。这些特性对于降低临界电流密度诱导的磁化翻转和增强磁性隧道结的热稳定性以及由TbFeCo磁性层制成的纳米线中的电流诱导的畴壁运动是潜在有用的。
We have studied the effect of an additional thin Pt underlayer on the magnetic properties of ultrathin perpendicularly magnetized TbFeCo films grown on silicon substrates. We have demonstrated that the presence of a thin Pt underlayer can enhance the perpendicular coercivity of ultrathin TbFeCo films with thickness down to 1 nm while preserving their low saturation magnetization. This can be attributed to the hybridization of Pt and Co orbitals, which induces the strong interfacial perpendicular anisotropy of Co/Pt and/or CoFe/Pt. These characteristics are potentially useful to reduce the critical current density induced magnetization switching and enhance the thermal stability of a magnetic tunnel junction and the current-induced domain wall motion in a nanowire made out of the ultrathin TbFeCo magnetic layer.