Formation of carbide-derived carbon on β-silicon carbide whiskers
Formation of carbide-derived carbon on β-silicon carbide whiskers
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DOI：
10.1111/j.1551-2916.2005.00780.x
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发表时间：
2006-02-01
影响因子：
3.9
通讯作者：
Pereselentseva, LN
中科院分区：
文献类型：
--
作者：
Cambaz, ZG;Yushin, GN;Pereselentseva, LN
通过从SiC中提取Si原子，在β-SiC晶须上合成了碳。在这项研究中，三种不同的高温提取方法被用来从SiC中去除Si原子：在Cl-2或HCl中的处理和真空分解。在所有的氯化实验和1700摄氏度的真空处理中，碳保持了SiC晶须的原始形状。在更高的温度（2000摄氏度）下，真空分解导致晶须形状的扭曲。高分辨透射电子显微镜和拉曼光谱表明，碳化物衍生碳的结构取决于Si提取方法和工艺参数。SiC的氯化导致形成大部分无定形的纳米多孔碳。SiC在HCl环境中高温处理产生类富勒烯结构，而高温真空分解导致石墨的形成。透射电子显微镜研究的碳涂层厚度在氯-2在不同的氯化时间显示线性反应动力学在700摄氏度。拉曼研究表明，随着氯化温度的升高，碳结构变得更加有序。结果表明，采用硅萃取技术可以精确控制碳涂层的厚度和形貌。
Carbon was synthesized on beta-SiC whiskers by extraction of Si atoms from SiC. In this study, three different elevated temperature extraction methods were used to remove Si atoms from SiC: treatments in either Cl-2 or HCl and vacuum decomposition. In all chlorination experiments and vacuum treatment at 1700 degrees C, carbon preserved the original shape of SiC whiskers. At higher temperatures (2000 degrees C), vacuum decomposition led to a distortion in the shape of the whiskers. High-resolution transmission electron microscopy and Raman spectroscopy showed that the structure of carbide-derived carbon depends on the Si extraction method and the process parameters. Chlorination of SiC resulted in the formation of mostly amorphous nanoporous carbon. High-temperature treatment of SiC in HCl environment produced fullerene-like structures, while high-temperature vacuum decomposition resulted in the formation of graphite. Transmission electron microscopy studies of the carbon coating thickness produced in Cl-2 at various chlorination times revealed linear reaction kinetics at 700 degrees C. Raman studies showed that the carbon structure became more ordered with increasing chlorination temperature. The results obtained demonstrate that by using the silicon extraction technique, one can precisely control the thickness and morphology of the carbon coating.