Synthesis of cobalt nanoparticle and fabrication of magnetoresistance devices by ion-assisted aerosol generation method
Synthesis of cobalt nanoparticle and fabrication of magnetoresistance devices by ion-assisted aerosol generation method
复制标题
离子辅助气溶胶发生法钴纳米颗粒的合成及磁阻器件的制备
DOI：
10.1080/02786826.2011.588729
复制
发表时间：
2011
影响因子：
5.2
通讯作者：
Motoaki Adachi
中科院分区：
文献类型：
--
作者：
Hiroyuki Shirai;Takuya Kinoshita;Motoaki Adachi
采用离子辅助气溶胶生成方法之一的电离化学气相沉积（ionization chemical vapor deposition，CVD）法合成了Co纳米颗粒，并利用其制备了磁电阻器件。三羰基亚硝酰钴蒸气在被送入反应器之前被高压电离器电离。它在炉反应器中通过热分解反应并形成纳米颗粒。粒子存款在具有两个Au电极的绝缘体衬底上，并填充电极之间的差距。然后在氢气下对该Co纳米颗粒装置进行退火以使沉积的颗粒脱氧。退火后，将两条铜线连接到两个Au电极上，以连接直流电压供应器和电流表。通过使用超导量子干涉装置（SQUID）磁力计测量其电阻来评估装置的磁阻。退火前后的纳米颗粒的X射线衍射图案分别显示CoO和Co。两种Co纳米粒子数密度分别为4.25 × 1010和1.16 × 1011 cm-2的器件在外加电压为30 V、测量温度为5 K、磁场为-1 1 T时的磁电阻率分别为73%和1002%。实验结果表明，该方法可用于钴纳米颗粒磁电阻器件的制备。
The ionization chemical vapor deposition (ionization CVD) method, which is one of the ion-assisted aerosol generation methods, was used to synthesize Co nanoparticles and fabricate a magnetoresistance device using them. A cobalt tricarbonyl nitrosyl vapor is ionized by a high-pressure ionizer before being fed into the reactor. It reacts and forms nanoparticles by a thermal decomposition reaction in the furnace reactor. Particles deposit electrostatically on an insulator substrate that has two Au electrodes and fill the gap between the electrodes. This Co-nanoparticle device is then annealed under hydrogen gas to deoxidize the deposited particles. After annealing, two copper wires are attached to the two Au electrodes to connect with a DC voltage supplier and an ammeter. The magnetoresistance of the device was evaluated by measuring its electrical resistance using a superconducting quantum interference device (SQUID) magnetometer. The X-ray diffraction patterns of the nanoparticles before and after annealing revealed CoO and Co, respectively. Two fabricated devices with number densities of Co nanoparticles of 4.25 × 1010and 1.16 × 1011cm−2showed magnetoresistance ratios of 73% and 1002%, respectively, at an applied voltage of 30 V, a measurement temperature of 5 K, and a magnetic field of −1 ∼ 1 T. It was found from the experimental results that the method developed in this article was useful to fabricate the Co-nanoparticle magnetoresistance device.