Step control of vicinal 6H-SiC(0001) surface by H2 etching -: art. no. 104919
Step control of vicinal 6H-SiC(0001) surface by H2 etching -: art. no. 104919
复制标题
DOI：
10.1063/1.1901838
复制
发表时间：
2005-05-15
影响因子：
3.2
通讯作者：
Yonezu, H
中科院分区：
文献类型：
--
作者：
Nakajima, A;Yokoya, H;Yonezu, H
研究了H-2刻蚀在相邻6H-SiC（0001）表面诱导的各向异性步聚现象。利用原子力显微镜和高分辨率透射电子显微镜观察到台阶结构的偏移角< 2度。蚀刻表面呈现出三种类型的台阶聚束：(1)直线型六层台阶聚束；(2)直线型六层台阶聚束和纳米晶片聚束；(3)锯齿形三层台阶聚束。台阶的高度和密度可以通过附近表面的倾斜角度和方向来控制。在横向蚀刻速率和表面自由能各向异性的点上讨论了阶跃聚束过程的机理。(c) 2005年美国物理研究所。
Anisotropic step bunching on vicinal 6H-SiC(0001) surface induced by H-2 etching was investigated. Step structures were observed using atomic force microscopy and high-resolution transmission electron microscopy at off angle < 2 degrees. The etched surfaces exhibited three types of step bunching: (1) straight six-bilayer steps, (2) straight six-bilayer steps and nanofacets, and (3) zigzag three-bilayer steps. The step height and density can be controlled by a tilt angle and direction of a vicinal surface. Mechanisms of the step bunching processes are discussed at points of an anisotropy of lateral-etching rates and surface-free energies. (c) 2005 American Institute of Physics.