High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.
High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.
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DOI：
10.1364/oe.23.008383
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发表时间：
2015-04
期刊：
影响因子：
3.8
通讯作者：
S. Luo;H. Ji;F. Gao;F. Xu;X. Yang;P. Liang;T. Yang
中科院分区：
文献类型：
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作者：
S. Luo;H. Ji;F. Gao;F. Xu;X. Yang;P. Liang;T. Yang
我们展示了高性能的2150 nm InAs/InGaAs/InP量子阱（QW）激光器的金属有机气相外延生长。该激光器结构由两个InAs/InGaAs量子阱组成，脊形波导宽30 μ m，腔面为两个解理腔面。在室温下实现了连续波工作，在无限长腔长条件下获得了90.4A/cm（2）/QW的低阈值电流密度和大于160 mW的单端面输出功率。在脉冲注入模式下，单端面最大峰值功率高达1.35W.通过改变腔长，可以在2142 nm至2154 nm的范围内调谐激光波长。此外，最高工作温度可达100 °C，在20-70 °C的温度范围内，特征温度分别为50 K（T（0））和132 K（T（1））。
We demonstrate high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs QWs, with a 30 μm-wide ridge waveguide and two cleaved cavity facets. The continuous wave operation at room temperature (RT) is achieved, with an output power of larger than 160 mW per facet and with a low threshold current density of 90.4 A/cm(2) per QW derived for the infinite cavity length. Under pulse injection mode, the maximal peak power per facet is as high as 1.35 W. By varying the cavity length, the lasing wavelength can be tuned in a range from 2142 nm to 2154 nm. Moreover, the highest operating temperature reaches up to 100 °C, and characteristic temperatures are 50 K (T(0)) and 132 K (T(1)) in the temperature range of 20-70 °C, respectively.