Achieving a high-performance, self-powered, broadband perovskite photodetector employing MAPbI3 microcrystal films
Achieving a high-performance, self-powered, broadband perovskite photodetector employing MAPbI3 microcrystal films
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DOI：
10.1039/c9tc05668h
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发表时间：
2020-02-14
影响因子：
6.4
通讯作者：
Wang, Hao
中科院分区：
文献类型：
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作者：
Pan, Xiyan;Zhou, Hai;Wang, Hao
有机-无机金属卤化物钙钛矿由于其高的光吸收系数、可调的带隙和简单的溶液处理技术而在发光二极管、光电探测器（PD）和太阳能电池等应用中取得了巨大的成功。然而，它们的多晶薄膜具有低载流子迁移率和高缺陷态，这限制了器件的性能。作为替代物，钙钛矿微晶（MC）膜具有更高的载流子迁移率和更低的缺陷态密度，因此，它们近年来受到广泛关注。本文介绍了厚度可控、带隙可调的MAPbX（3）（X = Br，I）MC薄膜，并首次组装了ITO玻璃/钙钛矿MC薄膜/碳结构的自供电MAPbI（3）钙钛矿MC PD（MCPD）。通过优化MC膜的厚度，我们的无空穴传输层（HTL）PD表现出优异的自供电性能，开/关比高达2 × 10（5），上升/下降时间为80/580 μ s，响应率为0.26 A W-1，探测率为7.01 × 10（11）琼斯和线性动态范围为107 dB。此外，我们的无封装MCPD具有出色的光稳定性和储存稳定性。这些结果为制备高性能、高稳定性的钙钛矿MC器件提供了一种很好的方法。
Organic-inorganic metal halide perovskites have achieved great success in applications such as light-emitting diodes, photodetectors (PDs) and solar cells due to their high light absorption coefficients, tunable band gaps and simple solution-process technologies. However, their polycrystalline films have low carrier mobility and high defect states, which limit the device performance. As substitutes, perovskite microcrystal (MC) films exhibit higher carrier mobility and lower defect state density and thus, they have received much attention in recent years. Herein, we introduce MAPbX(3) (X = Br, I) MC films with controllable thickness and adjustable band gap, and the self-powered MAPbI(3) perovskite MC PDs (MCPDs) with a structure of ITO glass/perovskite MC film/carbon have been assembled for the first time. By optimizing the thickness of the MC film, our hole-transport-layer-free (HTL-free) PDs exhibit excellent self-powered performance, with an on/off ratio as high as 2 x 10(5), the rise/fall time of 80/580 mu s, the responsivity of 0.26 A W-1, the detectivity of 7.01 x 10(11) Jones and the linear dynamic range of 107 dB. In addition, our MCPDs without encapsulation show excellent light and storage stability. These results indicate a good method for preparing high-performance and high-stability perovskite MC devices.