SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode
复制标题
具有集成自组装三级保护肖特基势垒二极管的 SiC 沟槽 MOSFET
DOI：
10.1109/ted.2017.2767904
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发表时间：
2018-01-01
影响因子：
3.1
通讯作者：
Tian, Qi
中科院分区：
文献类型：
--
作者：
Li, Xuan;Tong, Xing;Tian, Qi
提出并通过仿真研究了一种集成三级保护（TLP）肖特基势垒二极管（SBD）的碳化硅（SiC）沟槽MOSFET（TMOS），称为ITS-TMOS。该器件采用集成的 TLP-SBD，可显着改善体二极管特性，同时保证 TMOS 优异的基本性能。在阻挡状态下，P基区、沟槽栅极和沟槽底部的P+屏蔽作为肖特基接触的TLP。每个保护都有助于耗尽肖特基接触下方的漂移区。受益于自组装TLP，ITS-TMOS集成体二极管的漏电流显着降低。此外，反向导通电压（<inline-formula> <tex-math notation="LaTeX">${V} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>）和栅极电荷（<inline-formula> <tex-math notation="LaTeX">${Q} _{g}$ </tex-math></inline-formula>） ITS-TMOS 分别比传统 TMOS 低 65% 和 18%。整体性能的提高使 SiC ITS-TMOS 成为高效率和高功率密度应用的有力候选者。
A silicon carbide (SiC) trench MOSFET (TMOS) with integrated three-level protection (TLP) Schottky barrier diode (SBD), named ITS-TMOS, is proposed and investigated by simulation. The device features the integrated TLP-SBD that remarkably improves body diode characteristics while guarantees excellent fundamental performance of TMOS. In the blocking state, the P-base region, the trench gate, and the P+ shield at the trench bottom serve as the TLP of the Schottky contact. Each protection assists in depleting the drift region beneath Schottky contact. Benefiting from the self-assembled TLP, the leakage current of the integrated body diode of the ITS-TMOS is significantly reduced. Moreover, the reverse turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>) and the gate charge (<inline-formula> <tex-math notation="LaTeX">${Q} _{g}$ </tex-math></inline-formula>) of the ITS-TMOS are 65% and 18% lower than those of the conventional TMOS, respectively. The improved overall performances make the SiC ITS-TMOS a competitive candidate for high-efficiency and high power density applications.