Multifunctional Optoelectronic Random Access Memory Device Based on Surface-Plasma-Treated Inorganic Halide Perovskite
Multifunctional Optoelectronic Random Access Memory Device Based on Surface-Plasma-Treated Inorganic Halide Perovskite
复制标题
基于表面等离子体处理无机卤化物钙钛矿的多功能光电随机存取存储器件
DOI：
10.1002/aelm.202100366
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发表时间：
2021
影响因子：
6.2
通讯作者：
Li Chao
中科院分区：
文献类型：
--
作者：
Liu Qi;Yue Wenjing;Li Yang;Wang Wenxiao;Xu Lei;Wang Yaqi;Gao Song;Zhang Chunwei;Kan Hao;Li Chao
新兴的光电阻性随机存取存储器（RRAM）器件是由性能优异的光电材料实现的，在串扰、功耗、响应速度、存储和计算能力等方面都具有相当大的优势。然而，具有优异电学和光电性能的光电RRAM器件很少被报道，这阻碍了相应数据存储和计算器件的发展。在本研究中，基于表面等离子体处理的无机卤化物钙钛矿构建了具有优异电学和光电子性能的光电RRAM器件。所提出的RRAM器件具有光辅助的多电平电阻以及优异的电阻开关（RS）性能，例如高开/关比，稳定的耐用性和保持时间。此外，在光的辅助下，加法器功能和逻辑运算（蕴涵和或）在该器件上成功实现。此外，研究表明，钙钛矿可以生长在柔性衬底上，从而导致具有稳定RS行为的柔性RRAM器件。在银原子导电丝模型的基础上，借助密度泛函理论计算，阐述了可能的作用机理。这种提出的高性能多功能光电RRAM器件无疑显示了开发高密度存储、计算、柔性和瞬态存储器件的广阔可能性。
Emerging optoelectronic resistive random access memory (RRAM) devices, enabled by optoelectronic materials with excellent properties have considerable advantages in terms of crosstalk, power consumption, response speed, and highly improved storage and computing abilities of RRAM devices. However, optoelectronic RRAM devices exhibiting outstanding electrical as well as optoelectronic performances are seldom reported, which hinders the development of the corresponding data storage and computing devices. In this study, an optoelectronic RRAM device with excellent electrical and optoelectronic properties is constructed based on surface‐plasma‐treated inorganic halide perovskite. The proposed RRAM device shows light‐assisted multilevel resistance as well as excellent resistive switching (RS) behavior, such as a high ON/OFF ratio, stable endurance and retention time. Moreover, the ADDER function and logic operation (IMPLICATION and OR) are successfully implemented on the proposed device with aid of light. Additionally, it is shown that the perovskite can be grown on a flexible substrate, leading to a flexible RRAM device exhibiting stable RS behavior. The possible operating mechanism is elaborated based on the Ag atom conductive filament model with assistance of density functional theory calculations. This proposed high‐performance multifunctional optoelectronic RRAM device undoubtedly shows broad possibilities for developing high‐density storage, in‐computing, flexible and transient memory devices.