Growth of Ionization Balance from F-like to Bare Ions of Heavy Atoms in an Electron Beam Ion Trap
Growth of Ionization Balance from F-like to Bare Ions of Heavy Atoms in an Electron Beam Ion Trap
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DOI：
10.1585/pfr.3.052
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发表时间：
2008-09
影响因子：
0.8
通讯作者：
Jian-Xin Sun;N. Nakamura;M. Tona;C. Yamada;H. Watanabe;S. Ohtani;Yunqing Fu
中科院分区：
文献类型：
--
作者：
Jian-Xin Sun;N. Nakamura;M. Tona;C. Yamada;H. Watanabe;S. Ohtani;Yunqing Fu
通过测量从电子束离子阱（Tokyo-EBIT）中提取的离子，研究了In和I从类F到裸离子的电离平衡随捕获时间的变化。目前的实验是第一次清楚地证明了在EBIT中产生的非常高电荷离子的时间行为。提取的H-类离子的生长速率进行比较的X-射线发射的强度产生的辐射复合到K-壳层的H-类离子。捕获的离子的绝对数密度估计从X射线发射的强度。
Ionization balance from F-like to bare ions of In and I is investigated as a function of trapping time by measuring extracted ions from an electron beam ion trap, the Tokyo-EBIT. The present experiment is the first clear demonstration of the temporal behavior of the very highly charged ions that have been produced in the EBIT. The growth rate of extracted H-like ions is compared with that of the intensity of the x-ray emission resulting from radiative recombination into the K-shell of H-like ions. The absolute number density of trapped ions was estimated from the intensity of the x-ray emission.