Rapid-incorporation path of growth units on surfaces during crystal growth
Rapid-incorporation path of growth units on surfaces during crystal growth
复制标题
晶体生长过程中表面生长单元的快速结合路径
DOI：
10.2183/pjab.76.108
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
K. Nishioka
中科院分区：
文献类型：
--
作者：
M. Kitamura;K. Nishioka
通过改变中间位的能态和过程的活化能，研究了生长基元通过溶液中的中间位系列过程进入晶体生长表面扭结位的速率。一个简单的模型，其中的活化能是成比例的网站之间的能量状态的差异，在本研究中，以说明这一概念。该模型表明，通过一个中间位在某一能量状态的一系列过程的掺入率变得比那些通过中间位在不同的能量状态，这表明存在一个快速掺入路径的晶体生长的表面动力学。
The incorporation rates of growth units into kink sites on growth surfaces of crystals by series processes via intermediate sites from solution are investigated by changing the energy states of the intermediate sites and the activation energies for the processes. A simple model where the activation energies are proportional to the differences of the energy states between sites is taken in the present study to illustrate the concept. The model shows that the incorporation rate of a series process via an intermediate site in a certain energy state becomes much larger than those via intermediate sites in different energy states, suggesting the existence of a rapid-incorporation path in surface kinetics of crystal growth.