Growth of GexSi1−x alloys on Si(110) surfaces
Growth of GexSi1−x alloys on Si(110) surfaces
复制标题
GexSi1−x 合金在 Si(110) 表面上的生长
DOI：
10.1063/1.106316
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发表时间：
1991
影响因子：
4
通讯作者：
D. Bahnck
中科院分区：
文献类型：
--
作者：
R. Hull;J. Bean;L. Peticolas;D. Bahnck
我们研究了GexSi1-−-x合金在Si表面的生长。对于这种生长法线，只有两个倾斜的{111}滑动面与界面相交。这两个交点沿相同的面内[110]方向，因此经典的a/2<110>{111}滑移失配位错只能沿一个界面方向形成。这在失配位错的应变松弛之后产生了一个正交晶胞。在足够高的应力下，以前未观察到的失配位错结构被激活。失配位错引入的临界厚度相对于(100)表面的生长向较低的Ge组分移动，这与解决(110)系统中位错Burgers矢量界面成分的较高角度因子是一致的。
We have studied the growth of GexSi1−x alloys on Si(110) surfaces. For this growth normal, there are only two inclined {111} glide planes intersecting the interfacial plane. Both intersections are along the same in‐plane [110] direction, thus classic a/2〈110〉{111} glide misfit dislocations can form along only one interfacial direction. This produces an orthorhombic unit cell following strain relaxation by misfit dislocations. At sufficiently high stresses, previously unobserved misfit dislocation structures are activated. The critical thickness for misfit dislocation introduction is found to be shifted to lower Ge compositions with respect to growth on the (100) surface, consistent with a higher angular factor resolving the interfacial component of the dislocation Burgers vector in the (110) system.