4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology
4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology
复制标题
采用变质 HEMT 技术的 4-8 GHz 低噪声放大器
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
H. Zirath
中科院分区：
文献类型：
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作者：
M. Kelly;I. Angelov;J. P. Starski;N. Wadefalk;H. Zirath
本文介绍了两种变质型高电子迁移率晶体管(MHEMT)在4-8 GHz频段的低噪声放大器。一个放大器包含单片微波集成电路(MMIC)芯片上的完整电路，另一个放大器与MMIC一起配置在低损耗Duroid子态上的输入网络。MMIC的常温测试结果为：增益为28+mn1db，典型噪声温度为56K；混合MMIC的常温测试结果为29plusmn2db，最低噪声温度为41K；冷却至20K时，最低噪声温度为6K。
This paper describes two metamorphic high electron mobility transistor (mHEMT) amplifiers with low noise in the frequency band 4-8 GHz. One amplifier contains the complete circuitry on a monolithic microwave integrated circuit (MMIC) chip and the other is configured with the input network on a low loss duroid substate together with an MMIC. The measurements at room temperature for the MMIC gave a gain of 28plusmn1 dB and a typical noise temperature of 56 K. The measurements at room temperature for the hybrid-MMIC gave a gain of 29plusmn2 dB and a minimum noise temperature of 41 K. When cooled to 20 K the hybrid-MMIC obtained a minimum noise temperature of 6 K. The hybrid-MMIC is compared to InP based hybrid LNAs at cryogenic temperature