Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio
Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio
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DOI：
10.1016/j.mee.2013.06.010
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发表时间：
2014-01-01
影响因子：
2.3
通讯作者：
Bourouina, Tank
中科院分区：
文献类型：
--
作者：
Parasuraman, Jayalakshmi;Summanwar, Anand;Bourouina, Tank
本文主要研究亚微米级深反应离子刻蚀(DRIE)技术。使用博世工艺在250 nm的沟槽上获得了高达160：1的高宽比，使用低温工艺在35 nm的沟槽上获得了高达120：1的高宽比。建议的蚀刻配方专门针对亚微米特征进行了优化，与数十微米范围内的特征尺寸不兼容。基于对实验和文献数据的分析，我们发现了一个先前报道的双参数经验对数定律，它准确地描述了宽宽比对沟槽宽度的依赖关系，包括亚微米范围内的宽度和刻蚀参数。我们还提出了一个新的品质因数(FOM)，它描述了任何给定的刻蚀工艺所能达到的最终纵横比。该FOM还允许比较不同的纵横比性能，同时考虑获得该性能的沟槽的尺寸。(C)2013爱思唯尔B.V.保留所有权利。
This paper focuses on deep reactive ion etching (DRIE) of sub-micrometer features. Very high aspect ratios up to 160:1 on trenches of 250 nm have been achieved using the Bosch process and up to 120:1 on trenches of 35 nm using a cryogenic process. The proposed etch recipes are specifically optimized for sub-micrometer features, and are not compatible with feature sizes in the tens of micrometer range. Based on analyzing data from our experiments and from literature, we show that a previously reported two-parameter empirical logarithmic law accurately describes the dependency of aspect ratio on trench width over a wide range of widths and etch parameters, including the sub-micrometer regime. We also propose a new figure of merit (FOM) that describes the ultimate aspect ratio achievable for any given etching process. This FOM also allows comparison of different aspect ratio performances, while taking into account in the same time, the dimension of the trench for which this performance is attained. (C) 2013 Elsevier B.V. All rights reserved.