Effect of hydrogen on Pt/GaN Schottky diodes
Effect of hydrogen on Pt/GaN Schottky diodes
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DOI：
10.35848/1347-4065/abc65f
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发表时间：
2020-11
影响因子：
1.5
通讯作者：
Y. Irokawa
中科院分区：
文献类型：
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作者：
Y. Irokawa
采用电流-电压（I-V）、电容-电压（C-V）和阻抗谱测量研究了氢对Pt/GaN肖特基二极管的影响。结果表明，氢暴露降低了肖特基势垒高度和半导体空间电荷区的电阻，但不影响半导体空间电荷区的理想因子、载流子浓度和电容。暴露于干燥空气中的I-V曲线，1/C2-V曲线，和奈奎斯特图恢复到原来的值比暴露于纯N2更快，这表明Pt作为催化剂。氢诱导的Pt/GaN界面氧化物的性质的变化可能与这些现象有关。
The effect of hydrogen on Pt/GaN Schottky diodes was studied using current–voltage (I–V), capacitance–voltage (C–V), and impedance spectroscopy measurements. The results showed that hydrogen exposure reduced the Schottky barrier height and the resistance of the semiconductor space-charge region but did not affect the ideality factor, carrier concentration, or capacitance of the semiconductor space-charge region. Exposure to dry air restored the I–V curves, 1/C2–V curves, and Nyquist plots to the original values more rapidly than exposure to pure N2, suggesting that Pt functioned as a catalyst. Hydrogen-induced changes in the properties of the Pt/GaN interface oxide may be related to these phenomena.