Crystallization Behavior of Co32Fe48B20 Electrode Layers in Annealed Magnetic Tunnel Junctions
Crystallization Behavior of Co32Fe48B20 Electrode Layers in Annealed Magnetic Tunnel Junctions
复制标题
Co32Fe48B20 电极层在退火磁隧道结中的结晶行为
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
T. Lee
中科院分区：
文献类型：
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作者：
J. Bae;W. C. Lim;Hyun Jeong Kim;Tae Wan Kim;T. Lee
磁性隧道结的磁电阻率取决于铁磁电极和绝缘层之间的界面结构和特性。为了理解非晶CoFeB层的作用，使用以下三种不同的钉扎层（PL）的MTJ：CoFeB（PL 1）、CoFe/CoFeB/CoFe（PL 2）和CoFe（PL 3）。具有PL 1和PL 2的MTJ在退火后显示出几乎相同的最大MR比。这表明光滑或尖锐的界面具有增加的MR比率。CoFeB层的晶化温度对相邻层的结构和晶格参数表现出不同的依赖性。
The magnetoresistance (MR) ratio of magnetic tunnel junctions (MTJs) depends on the structure and characteristics of the interface between the ferromagnetic electrode and insulating layer. In order to understand the role of the amorphous CoFeB layer, the MTJs of the following three different pinned layers (PLs) were used: CoFeB (PL1), CoFe/CoFeB/CoFe (PL2) and CoFe (PL3). The MTJs with PL1 and PL2 showed almost the same maximum MR ratio after annealing. This indicates that a smooth or sharp interface has an increased MR ratio. The crystallization temperature of the CoFeB layer showed different dependence on the structure and lattice parameters of the adjacent layer.