Sign reversal of angular dependence of Planar Hall Effect in La0.7Ca0.3MnO3/SrTiO3 ultrathin film
Sign reversal of angular dependence of Planar Hall Effect in La0.7Ca0.3MnO3/SrTiO3 ultrathin film
复制标题
La0.7Ca0.3MnO3/SrTiO3超薄膜平面霍尔效应角度依赖性的符号反转
DOI：
10.1016/j.matchemphys.2016.05.068
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发表时间：
2016
影响因子：
4.6
通讯作者：
C. Tomy
中科院分区：
文献类型：
--
作者：
H. Sharma;H. Bana;A. Tulapurkar;C. Tomy
研究了应变对La0.7Ca0.3MnO(LCMO)超薄膜输运和磁性能的影响。在本文中，我们观察到在钛酸锶衬底上沉积的∼超薄膜(厚度为4 nm)的应变诱导平面霍尔效应(Phe)角依赖的符号反转。各向异性磁阻(AMR)中的符号反转也是由我们(H.Sharma等人)报道的。APL，105,222406)，之前。对于4 nm薄膜，AMR的符号反转和Phe与磁场或温度的角度关系可能归因于薄膜平面内拉应变的增加，这反过来又促进了磁化易轴的旋转。利用这些薄膜可以制作高场或低场开关器件。
We have investigated the effect of strain on the transport and magnetic properties of La0.7Ca0.3MnO3(LCMO) ultrathin films. Here, we present the observation of strain induced sign reversal of angular dependence of Planar Hall Effect (PHE) in LCMO ultrathin films (thickness ∼ 4 nm) deposited on SrTiO3(001) substrate (STO). This observation of sign reversal in anisotropic magnetoresistance (AMR) was also reported by us (H. Sharma et al. APL, 105, 222406), previously. The sign reversal of AMR and angular dependence of PHE with magnetic field or temperature for the 4 nm thin film may be attributed to the increase in tensile strain in the plane of the thin film which in turn facilitates the rotation of the magnetization easy axis. High field or low field switching devices can be fabricated using these thin films.