Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing
Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealing
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DOI：
10.1016/j.apmt.2023.102033
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发表时间：
2024-02
影响因子：
8.3
通讯作者：
A. Frechilla;M. Napari;N. Strkalj;Eduardo Barriuso;Kham Niang;Markus Hellenbrand;Pavel Strichovanec;F. Simanjuntak;Guillermo Antorrena;Andrew Flewitt;C. Magén;Germán F. de la Fuente;J. MacManus‐Driscoll;L. Angurel;José A. Pardo
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作者：
A. Frechilla;M. Napari;N. Strkalj;Eduardo Barriuso;Kham Niang;Markus Hellenbrand;Pavel Strichovanec;F. Simanjuntak;Guillermo Antorrena;Andrew Flewitt;C. Magén;Germán F. de la Fuente;J. MacManus‐Driscoll;L. Angurel;José A. Pardo
在这项工作中，我们研究了空气气氛中 10 nm 厚原子层沉积非晶 Hf0.5Zr0.5O2(HZO) 薄膜的亚纳秒激光诱导结晶。我们使用波长为 1064 nm 和脉冲为 800 ps 的红外激光器，以受控方式沿 TiN/HZO/TiN 电容器的顶部表面扫描直径 80 μm 的光点，对 TiN/HZO/TiN 电容器进行退火。 X 射线衍射和透射电子显微镜证明，激光退火过程在注量方面进行了优化，以实现 HZO 完全结晶成非单斜晶型。压电响应力显微镜和极化场环证实，最佳退火态 HZO 薄膜从第一个循环开始就是压电和铁电的。通过在样品的选定区域上扫描激光来实现空间选择性。微衍射实验表明，结晶区和非晶区之间的转变在几百微米的距离内是突变的。
In this work we study the sub-nanosecond laser-induced crystallization of 10 nm-thick atomic layer deposited amorphous Hf0.5Zr0.5O2(HZO) films in an air atmosphere. We used an infrared laser with 1064 nm wavelength and 800 ps pulses to anneal TiN/HZO/TiN capacitors by scanning an 80 μm-diameter spot along their top surface in a controlled way. The laser annealing process was optimised in terms of fluence to achieve the complete crystallization of HZO into a non-monoclinic polymorph, as demonstrated by X-ray diffraction and transmission electron microscopy. Piezoresponse force microscopy and polarization-field loops confirm that the optimal as-annealed HZO films are piezoelectric and ferroelectric from the first cycle on. Spatial selectivity was accomplished by scanning the laser on selected areas of the samples. Micro-diffraction experiments show that the transition between the crystallized and the amorphous region is abrupt within a distance of several hundred µm.