An Integrated Low-Voltage Broadband Lithium Niobate Phase Modulator
An Integrated Low-Voltage Broadband Lithium Niobate Phase Modulator
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DOI：
10.1109/lpt.2019.2911876
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发表时间：
2019-06-01
影响因子：
2.6
通讯作者：
Loncar, Marko
中科院分区：
文献类型：
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作者：
Ren, Tianhao;Zhang, Mian;Loncar, Marko
电光相位调制器是现代通信、微波光子和量子光子系统中的关键器件。对于这些应用来说，重要的是实现在高频下具有低半波电压的调制器。在这里，我们展示了一个集成的相位调制器，基于薄膜锂尖晶石平台，它同时具有小的片上损耗（类似于1 dB）和低半波电压在一个大的频谱范围（3.5-4.5 V，5-40 GHz）。通过用对应于大约四个半波电压的强30 GHz微波信号驱动调制器，我们产生了由电信L波段中跨越10 nm的40多个边带组成的光频率梳。我们的集成相位调制器的高电光性能与高RF功率处理能力（3.1 W）相结合，对于未来的光子学和微波系统至关重要。
Electro-optic phase modulators are critical components in modern communication, microwave photonic, and quantum photonic systems. Important for these applications is to achieve modulators with low half-wave voltage at high frequencies. Here, we demonstrate an integrated phase modulator, based on a thin-film lithium niobite platform, which simultaneously features small on-chip loss (similar to 1 dB) and low half-wave voltage over a large spectral range (3.5-4.5 V at 5-40 GHz). By driving the modulator with a strong 30-GHz microwave signal corresponding to around four half-wave voltages, we generate an optical frequency comb consisting of over 40 sidebands spanning 10 nm in the telecom L-band. The high-electro-optic performance combined with the high-RF power-handling ability (3.1 W) of our integrated phase modulator is crucial for future photonics and microwave systems.