Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers
Plasma-assisted electroepitaxy as a novel method for the growth of GaN layers
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等离子体辅助电外延作为 GaN 层生长的新方法
DOI：
10.1002/pssc.201100297
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Novikov S
中科院分区：
文献类型：
--
作者：
Novikov S
在当前的研究中，我们证明了一种生长 GaN 层的新方法的可行性，即等离子体辅助电外延 (PAEE)。在这种方法中，我们结合了等离子体工艺在Ga熔体中产生高浓度活性N物质的优点与电外延技术将N物质从Ga表面转移到生长界面的优点，而无需在表面或溶液内自发结晶。我们设计并建造了一个新的生长室，使我们能够将等离子体辅助分子束外延工艺与液相电外延系统相结合。我们已经证明，可以通过 PAEE 在低至~650oC 的生长温度和~3×10-5Torr 的低氮超压下生长 GaN 层。 （© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
In the current study we have demonstrated the feasibility of a novel approach for the growth of GaN layers, namely plasma‐assisted electroepitaxy (PAEE). In this method, we have combined the advantages of the plasma process for producing high concentrations of active N species in the Ga melt with the advantages of electroepitaxy in transferring the N species from the Ga surface to the growth interface, without spontaneous crystallisation on the surface or within the solution. We have designed and built a new growth chamber which allows us to combine the plasma‐assisted molecular beam epitaxy process with a liquid phase electroepitaxy system. We have demonstrated that it is possible to grow GaN layers by PAEE at growth temperatures as low as ∼650oC and with low nitrogen overpressures of ∼3×10‐5Torr. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)