Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations
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DOI：
10.7567/apex.11.041001
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发表时间：
2018-04-01
影响因子：
2.3
通讯作者：
Suda, Jun
中科院分区：
文献类型：
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作者：
Sawada, Naoki;Narita, Tetsuo;Suda, Jun
采用霍尔效应测量、深能级瞬态谱和二次离子质谱对金属有机物气相外延（MOVPE）生长的n型GaN中载流子补偿的来源进行了定量研究。这些分析技术表明，至少有三种不同的补偿来源。施主浓度低于5 × 10~（16）cm~（-3）的样品的载流子补偿可以用残余碳和电子陷阱E3（E-c-0.6 eV）来解释。对于具有较高供体浓度的样品，我们发现供体浓度和补偿受体浓度之间的比例关系，这是由第三个补偿源引起的。这可能是由于自补偿效应。(C)2018日本应用物理学会
The source of carrier compensation in metalorganic vapor phase epitaxy (MOVPE)-grown n-type GaN was quantitatively investigated by Hall-effect measurement, deep-level transient spectroscopy, and secondary ion mass spectrometry. These analysis techniques revealed that there were at least three different compensation sources. The carrier compensation for samples with donor concentrations below 5 x 10(16) cm(-3) can be explained by residual carbon and electron trap E3 (E-c - 0.6 eV). For samples with higher donor concentrations, we found a proportional relationship between donor concentration and compensating acceptor concentration, which resulted from a third source of compensation. This is possibly due to the self-compensation effect. (C) 2018 The Japan Society of Applied Physics