Enhancing UV photoconductivity of ZnO nanobelt by polyacrylonitrile functionalization
Enhancing UV photoconductivity of ZnO nanobelt by polyacrylonitrile functionalization
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DOI：
10.1063/1.2798390
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发表时间：
2007-10-15
影响因子：
3.2
通讯作者：
Bao, Gang
中科院分区：
文献类型：
--
作者：
He, J. H.;Lin, Yen H.;Bao, Gang
使用单个 ZnO 纳米带 (NB) 制造的紫外光电探测器在涂覆类似于 20 nm 等离子体聚合丙烯腈 (PP-AN) 纳米级薄膜后，光响应增强比裸 ZnO NB 高出 750 倍。这种巨大光电导性的机制被认为是由于电子从 ZnO NB 的价带转移到 PP-AN，然后又回到 ZnO 的导带的增强，在紫外线照射下有效激子解离的结果。该过程展示了一种简单有效的方法来提高纳米线/纳米带器件的性能，可能会产生用于成像、光传感和芯片内光学互连应用的超灵敏紫外线探测器。
UV photodetector fabricated using a single ZnO nanobelt (NB) has shown a photoresponse enhancement up to 750 times higher than that of a bare ZnO NB after coating with similar to 20 nm plasma polymerized acrylonitrile (PP-AN) nanoscale film. The mechanism for this colossal photoconductivity is suggested as a consequence of the efficient exciton dissociation under UV illumination due to enhanced electron transfer from valence band of ZnO NB to the PP-AN and then back to the conduction band of ZnO. This process has demonstrated an easy and effective method for improving the performance of the nanowire/NB-based devices, possibly leading to supersensitive UV detector for applications in imaging, photosensing, and intrachip optical interconnects.