Low‐Voltage Polyelectrolyte‐Gated Polymer Field‐Effect Transistors Gravure Printed at High Speed on Flexible Plastic Substrates
Low‐Voltage Polyelectrolyte‐Gated Polymer Field‐Effect Transistors Gravure Printed at High Speed on Flexible Plastic Substrates
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在柔性塑料基材上高速印刷低压聚电解质门控聚合物场效应晶体管凹版印刷
DOI：
10.1002/aelm.201600421
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发表时间：
2017
影响因子：
6.2
通讯作者：
A. Campbell
中科院分区：
文献类型：
--
作者：
Quentin Thiburce;A. Campbell
本文报道了在偏压为|1V|的情况下，以0.7m S−1的高速凹版印刷在塑料上的高分子场效应晶体管。值得注意的是，该工艺不需要任何表面修饰，仅依赖于基于溶剂混合的配方的仔细选择和优化。除了展示高通量制造，这项研究还满足了有机电子的另一项要求，并通过使用聚电解质绝缘体聚(4-苯乙烯磺酸)(PSSH)在环境空气中实现了低电压操作。PSSH是一种质子导体，当施加较小的栅极电压(≤|1V|)时，它在与栅电极和半导体沟道的界面处形成双电层。印刷PSSH具有10µF cm−2的高电容，使得印刷聚(3-己基噻吩基)空穴迁移率超过0.1cm2 V−1 S−1采用底栅、顶接触配置。
This study reports the fabrication of polymer field‐effect transistors operating under a bias of |1 V| in which the insulator and semiconductor are gravure‐printed on plastic at the high speed of 0.7 m s−1. Remarkably, the process does not necessitate any surface modification and relies solely on the careful selection and optimization of formulations based on solvent blends. In addition to demonstrating high‐throughput fabrication, this study fulfills another requirement for organic electronics and achieves low‐voltage operation in ambient air by using a polyelectrolyte insulator, poly(4‐styrenesulfonic acid) (PSSH). PSSH is a proton conductor that forms electrical double layers at the interfaces with the gate electrode and the semiconductor channel upon application of a small gate voltage (≤ |1 V|). Printed PSSH exhibits a high capacitance of 10 µF cm−2, leading to a printed poly(3‐hexylthiophene) hole mobility above 0.1 cm2 V−1 s−1 in a bottom‐gate, top‐contact configuration.
影响因子：
3.2
作者：
Chung, Dae-Young;Huang, Jingsong;Campbell, Alasdair J.
通讯作者：
Campbell, Alasdair J.