A 100 nanometer scale resistive heater-thermometer on a silicon cantilever
A 100 nanometer scale resistive heater-thermometer on a silicon cantilever
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DOI：
10.1088/0957-4484/20/9/095301
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发表时间：
2009-03-04
期刊：
影响因子：
3.5
通讯作者：
Park, K.
中科院分区：
文献类型：
--
作者：
Dai, Z.;King, W. P.;Park, K.
本文报道了一种基于接触光刻技术和控制退火工艺在硅微悬臂上制造100 nm尺度的加热-温度计的方法。该加热器是在光刻过程中形成的，可以实现约1 μ m的最小特征尺寸，而仔细控制掺杂和退火参数可以使加热器尺寸进一步减小，宽度为100 nm。加热器被制造到适合扫描探针显微镜的硅悬臂的自由端，并且可以集成到有或没有尖锐尖端的悬臂中。制作的加热器最高温度超过700℃，加热时间为56 μ s，达到500℃。
This paper reports a method for fabricating a 100 nm scale heater-thermometer into a silicon microcantilever based on contact photolithography and a controlled annealing process. The heater is formed during a photolithography process that can achieve a minimum feature size of about 1 mu m, while careful control of doping and annealing parameters allows the heater size to be further decreased, to a width of 100 nm. The heater is fabricated onto the free end of a silicon cantilever suitable for scanning probe microscopy, and can be integrated into cantilevers with or without sharp tips. The fabricated heater has a maximum temperature of over 700 degrees C, and a heating time of 56 mu s to reach 500 degrees C.