Fe3-xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor
Fe3-xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor
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DOI：
10.1063/1.2405389
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发表时间：
2006-12-11
影响因子：
4
通讯作者：
Ishikawa, Tetsuya
中科院分区：
文献类型：
--
作者：
Takaobushi, Junichi;Tanaka, Hidekazu;Ishikawa, Tetsuya
采用脉冲激光沉积技术制备了Fe_（3-x）Zn_xO_4（x=0-0.9）外延薄膜。Fe 3-xZnxO 4薄膜的电导率和磁性能的系统调制的整个范围内的Zn替代。反常的霍尔系数的测量结果表明，在室温下的自旋极化载流子的存在。通过硬X射线光电子能谱得到的价带谱表明，费米能级附近的态密度随着Zn浓度x的增加而降低。这些结果表明，该系统将作为一个可调的铁磁半导体与强电子关联。(c)2006年，美国物理学会。
Epitaxial ferri(ferro)magnetic Fe3-xZnxO4 thin films (x=0-0.9) were prepared using a pulsed-laser deposition technique. The electrical conductivity and magnetic properties of Fe3-xZnxO4 thin film were systematically modulated for the entire range of Zn substitution. Anomalous Hall coefficient measurements revealed the presence of spin-polarized carriers at room temperature. Valence band spectra obtained by hard x-ray photoemission spectroscopy revealed that the density of states near the Fermi level was reduced with an increasing Zn concentration of x. These results indicate that this system will serve as a tunable ferromagnetic semiconductor with a strong electron correlation. (c) 2006 American Institute of Physics.