Picosecond laser machining of ceramic matrix composite
Picosecond laser machining of ceramic matrix composite
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DOI：
10.1016/j.procir.2022.08.001
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
S. Marimuthu;J. Laker;Bethan Smith;Julian Mackechnie-Jarvis;Mike Wakeham
中科院分区：
文献类型：
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作者：
S. Marimuthu;J. Laker;Bethan Smith;Julian Mackechnie-Jarvis;Mike Wakeham
近年来，人们对将碳化硅（SiC）基陶瓷基复合材料（CMC）用于航空发动机应用的兴趣越来越大;然而，SiC CMC的常规和非常规加工都具有挑战性。超短脉冲激光加工正在发展成为SiC CMC等材料的一种有吸引力的选择;然而，目前的理解仅基于低功率激光，其去除率不符合工业要求。本文介绍了300 W皮秒激光加工SiC陶瓷基复合材料的结果。研究了高平均功率下SiC陶瓷基复合材料的激光加工特性。对于SiC CMC中2 mm的加工深度，300 W皮秒激光器可用于实现230 mm 3/min（0.76 mm 3/minW）的材料去除速率，然而，无论激光器参数如何，在需要解决的槽的侧面上观察到107 °的壁锥度。
In recent years, there has been increased interest in using silicon carbide (SiC) based ceramic matrix composites (CMC) materials for aero-engine applications; however, both conventional and non-conventional machining of SiC CMC is challenging. Ultrashort pulse laser machining is evolving as an attractive option for materials like SiC CMC; however, the current understanding is based only on low-power lasers, whose removal rate is not in-line with the industrial requirements. This paper presents the results of 300 W picosecond laser machining of SiC CMC. The laser machining characteristics of SiC CMC were investigated at high average power and discussed in detail. A 300 W picosecond laser can be used to achieve a material removal rate of ∼230 mm3/min (0.76 mm3/minW) for a machining depth of 2 mm in SiC CMC, however, irrespective of the laser parameters a wall taper of ∼7° was observed over the sides of the slots that need to be addressed.