Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design
Different Doping Behaviors of Silicon in Zinc Blende and Wurtzite GaAs Nanowires: Implications for Crystal-Phase Device Design
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DOI：
10.1021/acsanm.3c01493
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发表时间：
2023-07
影响因子：
5.9
通讯作者：
Qichao Hou;H. Fonseka;F. Martelli;B. Paci;A. Gustafsson;James A. Gott;H. Yang;S. Huo;Xuezhe Yu-Xu
中科院分区：
文献类型：
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作者：
Qichao Hou;H. Fonseka;F. Martelli;B. Paci;A. Gustafsson;James A. Gott;H. Yang;S. Huo;Xuezhe Yu-Xu
锌尖晶石（ZB）和纤锌矿（WZ）结构之间的晶相工程正在成为设计独特的光电和电子半导体器件的重要方法。因此，通过掺杂来设计它们的电学性质是至关重要的，但是在掺杂这两种晶体结构方面的直接实验比较仍然缺失。纳米线（NW）允许这两种结构共存，由于其特殊的生长模式。在这里研究的两个阶段之间的掺杂剂掺入的差异在GaAs NW壳周围的NW相干生长，从而保持核心的晶体结构。观察到Si掺杂剂具有更高的掺入到WZ结构中的效率，这是由于与ZB结构的掺入能量相比低2倍。此外，还可以预测，在两种结构中，Si更倾向于Ga位。实际上，WZ结构的As位掺杂能量比Ga位的掺杂能量高几个数量级，从而允许较低的掺杂补偿效应。这项工作提供了有用的信息，掺杂控制，从而设计晶相器件。
Crystal-phase engineering between zinc blende (ZB) and wurtzite (WZ) structures is becoming an important method in designing unique optoelectronic and electronic semiconductor devices. Doping to engineer their electric properties is thus of critical importance, but a direct experimental comparison in doping these two crystal structures is still missing. Nanowires (NWs) allow the coexistence of both structures due to their special growth mode. The differences in dopant incorporation between the two phases are studied here in GaAs NW shells that are coherently grown around the NWs, hence maintaining the crystal structure of the core. The Si dopant is observed to have a higher incorporation efficiency into the WZ structure due to a 2 times lower incorporation energy compared with that of the ZB structure. Besides, it can also be predicted that Si is more inclined toward Ga sites in both structures. Indeed, the As-site doping energy of the WZ structure is several orders of magnitude higher than that of Ga sites, allowing a lower doping compensation effect. This work provides useful information for doping control and hence designing crystal-phase devices.