Tapping Mode Atomic Force Microscopy Analysis of the Growth Process of Electroless Nickel‐Phosphorus Films on Nonconducting Surfaces
Tapping Mode Atomic Force Microscopy Analysis of the Growth Process of Electroless Nickel‐Phosphorus Films on Nonconducting Surfaces
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非导电表面化学镀镍磷薄膜生长过程的轻敲模式原子力显微镜分析
DOI:
10.1149/1.1838153
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发表时间:
1997
期刊:
影响因子:
--
通讯作者:
T. Osaka
中科院分区:
文献类型:
--
作者:
T. Homma;Masayuki Tanabe;Kunimasa Itakura;T. Osaka
The growth process of electroless nickel-phosphorous (NiP) films on nonconducting substrate was investigated quantitatively using tapping mode atomic force microscopy (TMAFM) with focus upon the nucleation density on the substrate surface. Three kinds of catalyzing processes were used for polyimide substrates to obtain nucleation densities of 900, 750, and 550 nuclei/μm 2 . The TMAFM observation showed that the film growth proceeds mainly through successive nucleation of fine particles with several nanometers in diameter and their three-dimensional growth, and that the nucleation density influences the state of aggregation of the particles and hence the resulting surface topography. The lower nucleation density developed the rougher surface with larger grains with a diameter of ca. 80 nm. However, the effect of nucleation density decayed with film growth and eventually vanished at a thickness of ca. 2000 nm due to successive nucleation. For comparison, the growth process of NiP on NiP coated Al substrate, which is used for rigid magnetic disk applications and has a higher nucleation density of 3000 nuclei/μm 2 , was also examined. This process resulted in a smooth surface without the formation of aggregates. Based upon these results, the root-mean-square roughness and scaling analyses were performed to evaluate quantitatively the differences in growth process