Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy
Nanothermal characterization of amorphous and crystalline phases in chalcogenide thin films with scanning thermal microscopy
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DOI：
10.1063/1.4895493
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发表时间：
2014-10-07
影响因子：
3.2
通讯作者：
Kolosov, O. V.
中科院分区：
文献类型：
--
作者：
Bosse, J. L.;Timofeeva, M.;Kolosov, O. V.
硫系相变材料(PCM)中非晶相和晶相的热性能对非易失性随机存储器的器件性能起着至关重要的作用。在这里，我们报道了激光脉冲GeTe和Ge2Sb2Te5薄膜中非晶相和晶相的纳米热形态。通过对两种薄膜厚度的SthM测量和定量有限元模拟，分别估算了每种化学计量比的非晶相和晶相的PCM热导率和PCM和SthM探针之间的热界电导。(C)2014 AIP出版有限责任公司。
The thermal properties of amorphous and crystalline phases in chalcogenide phase change materials (PCM) play a key role in device performance for non-volatile random-access memory. Here, we report the nanothermal morphology of amorphous and crystalline phases in laser pulsed GeTe and Ge2Sb2Te5 thin films by scanning thermal microscopy (SThM). By SThM measurements and quantitative finite element analysis simulations of two film thicknesses, the PCM thermal conductivities and thermal boundary conductances between the PCM and SThM probe are independently estimated for the amorphous and crystalline phase of each stoichiometry. (C) 2014 AIP Publishing LLC.