Solid-phase growth of Mg2Si by annealing in inert gas atmosphere
Solid-phase growth of Mg2Si by annealing in inert gas atmosphere
复制标题
惰性气体气氛退火固相生长 Mg2Si
DOI：
10.1002/pssc.201300358
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
and H. Udono
中科院分区：
文献类型：
--
作者：
T. Ikehata;T. Ando;T. Yamamoto;Y. Takagi;N. Sato;and H. Udono
硅化镁（Mg2Si）是一种有吸引力的应用于热电转换器件的半导体材料，因为它由无毒和资源丰富的元素组成。然而，由于镁和硅的热力学性质差异较大，制备Mg2Si薄膜存在困难。本研究采用固相法制备Mg2Si薄膜；在氩气气氛下，对金属Mg在Si衬底上的热退火进行了测试，并探索了最佳退火条件。结果表明，最佳退火温度为300 ~ 350℃，氩气压力大于50 Pa。（©2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
Magnesium silicide (Mg2Si) is an attractive semiconductor material for application to thermo‐electric conversion devices because it consists of non‐toxic and resource‐abundant elements. There were difficulties, however, in preparation of Mg2Si thin films coming from large difference in thermodynamic properties between Mg and Si. In the present study, preparation of Mg2Si thin films by solid‐phase synthesis; thermal annealing of metallic Mg on a Si substrate in argon gas atmosphere, is tested and optimum annealing conditions for the synthesis are explored. As a result, it is found that the optimum annealing temperature is 300‐350 °C and the argon gas pressure should be higher than 50 Pa. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)