Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers
Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers
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DOI：
10.1007/s10909-016-1569-x
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发表时间：
2016-07-01
影响因子：
2
通讯作者：
Mauskopf, P. D.
中科院分区：
文献类型：
--
作者：
Brien, T. L. R.;Ade, P. A. R.;Mauskopf, P. D.
我们描述了两个硅冷电子测辐射热计的光学特性，每个硅冷电子测辐射热计包括一个小的（）岛的简并掺杂硅与超导铝接触。辐射耦合到硅吸收器与双槽天线设计耦合到160 GHz的辐射通过硅透镜。第一器件具有高掺杂硅吸收体，第二器件具有高掺杂应变硅吸收体。使用一种新的方法互相关的输出从两个并行放大器，我们测量噪声等效功率的控制和应变设备，分别观察辐射时，从77 K源。在应变器件的情况下，噪声等效功率受到光子噪声的限制。
We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small () island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of and for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.