Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1−xPdxN thin films
Metal-semiconductor transition at a comparable resistivity level and positive magnetoresistance in Mn3Mn1−xPdxN thin films
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DOI：
10.1088/1361-6463/aaa258
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发表时间：
2018-01
期刊：
影响因子：
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通讯作者：
T. Xu;G. Ji;Z. Cao;A. Ji
中科院分区：
文献类型：
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作者：
T. Xu;G. Ji;Z. Cao;A. Ji
采用反应磁控共溅射法制备了反钙钛矿结构的Mn 3 Mn 1 −xPdxN薄膜（x ≤ 0.36）。所有的沉积物都表现出[1 0 0]择优取向，随着Pd原子部分取代Mn 3 MnN基体中的MnI原子，样品的晶格常数略有增大.在反钙钛矿结构中由Pd原子取代MnI原子，除了降低饱和磁化强度之外，还引起了在可比的电阻率水平下显著发生的金属-半导体转变。此外，在高Pd含量的样品中观察到正磁阻。这些可调的电磁性能有望在电子工业中得到应用。
Thin films of antiperovskite Mn3Mn1−xPdxN with x up to 0.36 were grown by reactive magnetron co-sputtering method. All the deposits exhibit a [1 0 0] preferential orientation, with the lattice constant slightly enlarged in samples with ever more Pd atoms partially substituting the MnI atoms in Mn3MnN matrix. The replacement of MnI atoms in antiperovskite structure by Pd atoms, besides reducing the saturation magnetization, also invokes a metal-semiconductor transition which occurs remarkably at a comparable resistivity level. Moreover, a positive magnetoresistance was observed in samples of a high Pd content. These tunable electrical and magnetic properties of ternary antiperovskite compounds might promise some ingenious applications in electronic industry.