Field-Emission Characteristics of Hydrogenated Amorphous Carbon Films Prepared by Surface Wave Plasma
Field-Emission Characteristics of Hydrogenated Amorphous Carbon Films Prepared by Surface Wave Plasma
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表面波等离子体制备氢化非晶碳薄膜的场发射特性
DOI：
10.1143/jjap.39.l929
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发表时间：
2000
影响因子：
1.5
通讯作者：
H. Sugai
中科院分区：
文献类型：
--
作者：
M. Nagatsu;T. Sano;N. Takada;Wang Guang;T. Hirao;H. Sugai
利用直径为40 cm的平面表面波等离子体制备氢化非晶碳薄膜，并将其应用于场发射显示。在功率为700W的2.45 GHz表面波等离子体中，在氦气和少量甲烷混合气体中，在100~200mTorr的较低气压下，获得了15 nm/m in的∼薄膜沉积速率。初步实验结果表明，在硅衬底上制备的氢化非晶碳膜具有良好的场发射特性：阈值电场定义为1µA/cm2时约为4V/µm，在7.5V/µm电场下的发射电流为0.1 mA/cm2。
Hydrogenated amorphous carbon films are prepared by a 40-cm-diameter planar surface wave plasma to apply them to field-emission display. The 2.45 GHz surface wave plasmas at 700 W give a film deposition rate of ∼15 nm/min in He gas mixed with a small amount of methane gas at a relatively low pressure of 100 to 200 mTorr. Preliminary experimental results show that the hydrogenated amorphous carbon films deposited on silicon substrates have good field-emission characteristics: a threshold electric field defined at 1 µA/cm2 was roughly 4 V/µm and an emission current of 0.1 mA/cm2 was achieved at an electric field of 7.5 V/µm.