Modelling escape and capture processes in GaInNAs quantum well solar cells
Modelling escape and capture processes in GaInNAs quantum well solar cells
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GaInNAs 量子阱太阳能电池中的逃逸和捕获过程建模
DOI：
10.1002/pssc.201200482
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
Kengradomying O
中科院分区：
文献类型：
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作者：
Kengradomying O
采用速率方程方法对GaInNAs/GaAs量子阱(QW)和GaInNAs/GaAsQW中的载流子逃逸和俘获过程进行了比较。考虑了对应于0.983 eV、1.000 eV和1.100 eV带隙的量子阱组合物在太阳能电池中的应用。对于GaInAs，使用了包括应变效应的标准合金模型，而对于GaInNAs，使用了带反腐蚀(BAC)模型。详细讨论了1.导带量子波势垒高度和2.相应的有效质量对电子逃逸和俘获的影响。考虑了势垒和量子阱对光生电流的贡献。量子波深度的影响大于电子有效质量的变化。(2013Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Carrier escape and capture processes in a GaInA/GaAs quantum well (QW) and a GaInNAs/GaAs QW are compared through modelling using a rate equation approach. QW compositions corresponding to bandgaps of 0.983 eV, 1.000 eV and 1.100 eV are considered for applications in solar cells. For GaInAs a standard alloy model is used, including strain effects, while for GaInNAs the Band Anticrossing (BAC) model is used. The roles of 1. the conduction band QW barrier height and 2. the corresponding effective mass in affecting the electron escape and capture in the QW are considered in detail. The contribution of photogenerated currents from the barrier and QW are considered. The effect of QW depth is found to be larger than changes in the electron effective mass. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)