DRAMsim3: A Cycle-Accurate, Thermal-Capable DRAM Simulator
DRAMsim3: A Cycle-Accurate, Thermal-Capable DRAM Simulator
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DOI：
10.1109/lca.2020.2973991
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发表时间：
2020-07-01
影响因子：
2.3
通讯作者：
Jacob, Bruce
中科院分区：
文献类型：
--
作者：
Li, Shang;Yang, Zhiyuan;Jacob, Bruce
DRAM技术近年来发展迅速。一些工业解决方案提供DRAM的3D封装，有些正在设想将CPU和DRAM集成在同一个芯片上。这些解决方案允许DRAM设计中的更高密度和更好的性能以及更低的功耗。然而，精确的仿真工具还没有跟上DRAM技术的发展，特别是对于3D DRAM的建模。在这封信中，我们提出了一个周期准确，验证的DRAM模拟器，和DRAMsim3，它提供了最好的模拟性能和功能集之间现有的周期准确的DRAM模拟器。DRAMsim3也是第一个提供运行时热建模和性能建模的DRAM模拟器。
DRAM technology has developed rapidly in recent years. Several industrial solutions offer 3D packaging of DRAM and some are envisioning the integration of CPU and DRAM on the same die. These solutions allow higher density and better performance and also lower power consumption in DRAM designs. However, accurate simulation tools have not kept up with DRAM technology, especially for the modeling of 3D DRAMs. In this letter we present a cycle-accurate, validated DRAM simulator, and DRAMsim3, which offers the best simulation performance and feature sets among existing cycle-accurate DRAM simulators. DRAMsim3 is also the first DRAM simulator to offer runtime thermal modeling alongside with performance modeling.