Novel Power Semiconductor Device and Peripheral Components
Novel Power Semiconductor Device and Peripheral Components
复制标题
新型功率半导体器件及外围元件
DOI：
10.2497/jjspm.63.328
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Funaki
中科院分区：
文献类型：
--
作者：
T. Funaki
电力电子技术作为一种节能技术，一直受到人们的关注。功率转换电路的额定电压和工作频率一直在增加，以获得更高的效率、更高的功率密度和上级功能性。为此，传统的硅功率半导体器件一直在发展，但改进接近理论极限。因此，与传统硅功率器件有本质区别的新型功率半导体器件的研究和开发一直很活跃。它们是传统电力电子的未知领域。因此，有许多难题需要解决。电力电子不是一个独立的学科，但它包括许多工程方面;例如电子工程，电气工程和控制工程。功率器件的发展是电力电子技术发展的先导，但这离不开外围器件和制造技术的配合。本文从外围器件的角度阐述了充分发挥新开发的新型宽带隙功率半导体器件性能所必需的宝贵技术。
Power electronics have been attracting attention as an energy saving technology. The rated voltage and the operating frequency of the power conversion circuit have been increasing to attain higher efficiency, higher power density, and superior functionality. To this end, the conventional Si power semiconductor device have been developing, but the improvement approaches the theoretical limitation. Then, novel power semiconductor devices, which are essentially different from conventional Si power devices, have been researching and developing enthusiastically. They are unchartered territory for the conventional power electronics. Therefore, there are many difficult problems to solve. Power electronics is not an independent academic discipline, but it consist of number of engineering aspects; e.g. electronics engineering, electrical engineering, and control engineering. The recent progress of power electronics is led by the development of power device, but it cannot be realized without cooperation of peripheral components and fabrication technologies. This paper explains the precious technology, which is indispensable to fully utilize the performance of newly developed novel wide band gap power semiconductor device from the view point of peripheral component.