Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
Spin relaxation in a GaAs quantum dot embedded inside a suspended phonon cavity
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嵌入悬浮声子腔内的 GaAs 量子点的自旋弛豫
DOI：
10.1103/physrevb.73.085310
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发表时间：
2005
影响因子：
3.7
通讯作者：
T. Brandes
中科院分区：
文献类型：
--
作者：
Y. Liao;Y. N. Chen;D. Chuu;T. Brandes
从理论上研究了嵌入半导体平板内的二维量子点中声子诱导的自旋驰豫。由于声子的van Hove奇点，我们发现了一个增强的驰豫速率。相反，形变势的消失也可能导致自旋弛豫速率的抑制。对于较大的量子点，自旋轨道相互作用和塞曼能级之间的相互作用导致了几个点的驰豫被抑制。此外，通过改变板的宽度，获得了从受限到块状系统的交叉。
The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing deformation potential may also result in a suppression of the spin relaxation rate. For larger quantum dots, the interplay between the spin orbit interaction and Zeeman levels causes the suppression of the relaxation at several points. Furthermore, a crossover from confined to bulklike systems is obtained by varying the width of the slab.