Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
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DOI：
10.1063/1.3700720
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发表时间：
2012-04
影响因子：
4
通讯作者：
Shulong Wang;Hongxia Liu;B. Gao;Huimin Cai
中科院分区：
文献类型：
--
作者：
Shulong Wang;Hongxia Liu;B. Gao;Huimin Cai
本文用集成蒙特卡罗方法对纤锌矿（WZ）氮化铟（InN）中电子的扩散率进行了理论分析。详细研究了电子扩散系数D（E， D,ω）随电场(E)、掺杂浓度(D)和频率（ω）的变化规律。研究结果表明，最大零场扩散系数约为250 cm2/s。平行于电场的扩散系数小于垂直于电场的扩散系数。进一步研究表明，在高频处扩散系数大大降低。利用爱因斯坦方程得到了零场迁移率，并与文献进行了比较。
This paper presents the theoretical analysis of the diffusivity of electrons in wurtzite (WZ) indium nitride (InN) using an ensemble Monte Carlo (EMC) method. The electron diffusion coefficient D(E,d,ω) as the functions of the electric field (E), doping concentration (d), and frequency (ω) is investigated in detail. The research results show that the maximum zero-field diffusion coefficient is about 250 cm2/s. The diffusion coefficient parallel to the electric field is smaller than that of perpendicular to the electric field. Further investigation shows that the diffusion coefficient decreases greatly at high frequency. Using Einstein equation, we obtain the zero-field mobility and make comparisons with the references.