Test Beam Characterization of 3-D Silicon Pixel Detectors
Test Beam Characterization of 3-D Silicon Pixel Detectors
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3D 硅像素探测器的测试光束表征
DOI：
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发表时间：
2008
影响因子：
1.8
通讯作者：
N. Wermes
中科院分区：
文献类型：
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作者：
M. Mathes;M. Cristinziani;C. Da Via;M. Garcia;K. Einsweiler;J. Hasi;C. Kenney;S. Parker;L. Reuen;M. Ruspa;J. Velthuis;S. Watts;N. Wermes
三维（3-D）硅探测器的特点是具有垂直于表面的圆柱形电极，并能穿透到大块材料中，而标准的硅探测器在顶部和底部都有平面电极。这种几何形状使得它们在标准硅探测器有局限性的环境中使用特别有趣，例如，欧洲核子研究中心（CERN）大型强子对撞机升级时预期的辐射环境。使用atlas像素前端芯片和读出电子器件，将多个3d传感器组装成混合像素探测器，这是第一次。在CERN SPS的100 GeV介子束流中对不同电极结构的器件进行了表征。在这里，我们报告了每50倍400 mum2像素面积具有三个3-D电极的未辐照器件的结果。在10 V左右的相对较低的偏置电压下，已经获得了完全充电。从单元尺寸中获得具有二进制读出的空间分辨率。平行于电极入射的轨道效率为95.9% + usmn0.1%，在15度入射的轨道效率为99.9% + usmn0.1%。测量了效率在像素区域的均匀性和电荷共享性。
Three-dimensional (3-D) silicon detectors are characterized by cylindrical electrodes perpendicular to the surface and penetrate into the bulk material in contrast to standard Si detectors with planar electrodes on the top and bottom. This geometry renders them particularly interesting to be used in environments where standard silicon detectors have limitations, such as, for example, the radiation environment expected in an upgrade to the Large Hadron Collider at CERN. For the first time, several 3-D sensors were assembled as hybrid pixel detectors using the ATLAS-pixel front-end chip and readout electronics. Devices with different electrode configurations have been characterized in a 100 GeV pion beam at the CERN SPS. Here, we report results on unirradiated devices with three 3-D electrodes per 50times400 mum2 pixel area. Full charge collection is obtained already with comparatively low bias voltages around 10 V. Spatial resolution with binary readout is obtained as expected from the cell dimensions. Efficiencies of 95.9%plusmn0.1% for tracks incident parallel to the electrodes and of 99.9%plusmn0.1% for tracks incident at 15deg are measured. The homogeneity and charge sharing of the efficiency over the pixel area are measured.