Inverted quantum-dot light-emitting diodes with solution-processed aluminium-zinc oxide as a cathode buffer
Inverted quantum-dot light-emitting diodes with solution-processed aluminium-zinc oxide as a cathode buffer
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DOI：
10.1039/c2tc00339b
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发表时间：
2013-01-01
影响因子：
6.4
通讯作者：
Jang, Jin
中科院分区：
文献类型：
--
作者：
Kim, Hyo-Min;Youn, Jun-Ho;Jang, Jin
本文报道了一种以金属氧化物作为阴极缓冲层的倒置结构量子点发光二极管。Al浓度为0 - 30%的Al掺杂氧化锌（AZO）用作在225 ℃温度下加工的QLED中的电荷传输层。结果表明，随着Al浓度的增加，AZO的电导率降低，发光强度从6380增加到26700 cd m（-2）。当Al浓度从0增加到30%时，在1000 cd m（-2）下的电流和功率效率分别从3.03增加到4.63 cd A（-1）和2.75增加到3.64 lm W-1。随着电子传输层厚度从33 nm增加到50 nm，AZO含量为30%的QLED发光强度进一步提高到31030 cd m（-2），电流效率进一步提高到5.21 cd A（-1）。因此可以得出结论，溶液处理的AZO可以成为QLED倒置结构的有效阴极缓冲剂。
We report an inverted structure of quantum-dot light emitting diodes (QLEDs) with a metal oxide as a cathode buffer. The Al doped zinc oxide (AZO) with Al concentration from 0 to 30% was used as a charge transport layer in QLEDs which were processed at the temperature of 225 degrees C. It is found that the conductivity of AZO decreases with increasing Al concentration, but the luminance intensity increases from 6380 to 26 700 cd m(-2). The current and power efficiencies at 1000 cd m(-2) increase from 3.03 to 4.63 cd A(-1) and 2.75 to 3.64 lm W-1, respectively, as the Al concentration increases from 0 to 30%. The luminance intensity for the QLED with 30% AZO increases further to 31 030 cd m(-2) and the current efficiency to 5.21 cd A(-1) by increasing the thickness of the electron transport layer from 33 to 50 nm. It is concluded therefore that a solution processed AZO can be an effective cathode buffer for an inverted structure of QLEDs.