The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors
The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors
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DOI：
10.1080/10420150.2013.763805
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发表时间：
2013-03
影响因子：
1
通讯作者：
Yabin Sun;Jun Fu;Jun Xu;Yudong Wang;Ji Yang;Wei Zhou;Wei Zhang-;Jie Cui;Gaoqing Li;Zhihong Liu;Sumin Wei;Feng Wang;F. Guan;Pengzhan Li;Tianjue Zhang
中科院分区：
文献类型：
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作者：
Yabin Sun;Jun Fu;Jun Xu;Yudong Wang;Ji Yang;Wei Zhou;Wei Zhang-;Jie Cui;Gaoqing Li;Zhihong Liu;Sumin Wei;Feng Wang;F. Guan;Pengzhan Li;Tianjue Zhang
本文研究了集电电极从衬底背面引出的高压硅锗异质结双极晶体管在γ和质子辐照下的总剂量效应。辐射前和辐射后的晶体管的直流特性被用来量化的剂量耐受性的两个不同的照射源。测量结果表明，器件的总剂量耐受性可达Mrad级。器件响应确实依赖于辐射源，并且质子辐照可以产生比伽马辐照更显著的损伤，导致更显著的性能退化。比较和讨论了这两种辐照的实验结果，并进一步分析和研究了其物理机制。不同的降解行为归因于质子辐照引起的电离损伤之外的额外位移损伤。
The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors with the collector electrode elicited from the backside of the substrate are investigated. Pre- and post-radiation DC characteristics of the transistors are used to quantify the dose tolerance to the two different irradiation sources. Measurement results indicate that the devices exhibit a total dose tolerance up to Mrad level. The device response is indeed radiation source dependent and the proton irradiation can produce a more significant damage than the gamma irradiation, causing more pronounced performance degradation. The experimental results from both irradiations are compared and discussed in detail, and furthermore the underlying physical mechanisms are analyzed and investigated. The considerably different degradation behaviors are attributed to the extra displacement damage besides ionizing damage induced by the proton irradiation.