Volume Fraction and Whisker Orientation Dependence of the Electrical Properties of SiC‐Whisker‐Reinforced Mullite Composites
Volume Fraction and Whisker Orientation Dependence of the Electrical Properties of SiC‐Whisker‐Reinforced Mullite Composites
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DOI：
10.1111/j.1151-2916.2001.tb01010.x
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发表时间：
2004-12
影响因子：
3.9
通讯作者：
R. Gerhardt;R. Ruh
中科院分区：
文献类型：
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作者：
R. Gerhardt;R. Ruh
在100 Hz-10 MHz的频率范围内评价了10%、20%和30% SiC晶须（SiCw）增强的热压莫来石复合材料的电学行为，并与2 GHz的数据以及直流电阻率测量结果进行了比较。结果发现，添加SiCw具有显着的效果上的介电性能，以及这些材料的电阻率。的交流特性（介电常数，介电损耗，和阻抗）显示出强烈的依赖于SiC的体积分数和相对于热压方向的电场的取向，因此晶须取向。直流电阻率测量是敏感的晶须体积分数，但不能很容易区分那些样品平行或垂直于热压方向测量是可能的交流测量。
The electrical behavior of hot-pressed mullite composites reinforced with 10, 20, and 30% SiC whiskers (SiCw) was evaluated in the frequency range 100 Hz–10 MHz and compared with 2 GHz data as well as dc resistivity measurements. It is found that the addition of SiCw has a dramatic effect on the dielectric properties as well as the resistivity of these materials. The ac properties (dielectric constant, dielectric loss, and impedance) show a strong dependence on the volume fraction of SiC and on the orientation of the electric field with respect to the hot-pressing direction and hence the whisker orientation. The dc resistivity measurements are sensitive to the whisker volume fraction but cannot easily discriminate between those samples that were measured parallel or perpendicular to the hot-pressing direction as was possible with the ac measurements.