A continuous-wave Raman silicon laser
A continuous-wave Raman silicon laser
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DOI：
10.1038/nature03346
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发表时间：
2005-02-17
期刊：
影响因子：
64.8
通讯作者：
Paniccia, M
中科院分区：
文献类型：
--
作者：
Rong, HS;Jones, R;Paniccia, M
在硅中实现光学增益和/或激光发射一直是基于硅的光子学中最具挑战性的目标之一（1-3），因为体硅是间接带隙半导体，因此具有非常低的发光效率。最近，受激拉曼散射已被用来证明光放大和激光在硅（4-9）。然而，由于与双光子吸收（TPA）诱导的自由载流子吸收（FCA）（10-12）相关的非线性光学损耗，到目前为止，激光发射一直限于脉冲操作（8，9）。在这里，我们展示了连续波硅拉曼激光器。具体来说，我们表明，TPA诱导的FCA在硅中可以显着减少通过引入一个反向偏置的p-i-n二极管嵌入在硅波导。激光腔是通过在硅波导的端面上涂覆多层介质膜而形成的。我们已经证明了稳定的单模激光输出的边模抑制超过55分贝和线宽小于80兆赫。激射阈值取决于p-i-n反向偏置电压，激光波长可以通过调节泵浦光的波长来调谐。连续波硅激光器的演示是硅基光电器件的一个重要里程碑。
Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics(1-3) because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon(4-9). However, because of the nonlinear optical loss associated with two-photon absorption (TPA)-induced free carrier absorption (FCA)(10-12), until now lasing has been limited to pulsed operation(8,9.) Here we demonstrate a continuous-wave silicon Raman laser. Specifically, we show that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide. The laser cavity is formed by coating the facets of the silicon waveguide with multilayer dielectric films. We have demonstrated stable single mode laser output with side-mode suppression of over 55 dB and linewidth of less than 80 MHz. The lasing threshold depends on the p-i-n reverse bias voltage and the laser wavelength can be tuned by adjusting the wavelength of the pump laser. The demonstration of a continuous-wave silicon laser represents a significant milestone for silicon-based optoelectronic devices.